GaN Based LED Epi Wafer Manufacturer

The development of power supply inevitably needs small volume and high efficiency products, and it is inevitable to improve the working frequency. GaN and SiC are dominant in power density.Gallium nitride (GaN)material first came into people's sight from LED and RF, and now develops into the application field of power devices. Gallium nitride GaN will provide high performance, low cost solutions.Because gallium nitride is based on silicon,or based on sapphire the cost of using 8 inch wafers will be greatly reduced in the future.

Homray Material’s GaN products are used primarily within LED, RF 5G, power electronics, and sensor applications. Homray Material manufactures GaN-on-Si and GaN-on-SiC and GaN on sapphire LED epitaxial wafer materials and supplies these to integrated device manufacturers to create high performance power and RF devices and LED chips.

Benefits of using GaN
High power
High frequency
High power efficiency
Low power consumption, energy saving
High-temperature robustness
Exceed the limitations of current Si power device