GaN Epitaxial wafer is made of gallium nitride, which can be used to manufacture electronic components, electronic devices, and electronic parts. GaN Epitaxial wafer has good thermal stability and electromagnetic shielding, and can be used to manufacture high-precision parts and components, such as circuit boards, electronic controllers, electronic modules, electronic interfaces, electronic connectors, etc.

With the development of silicon-based technology gradually approaching the limit, Silicon Carbide (SiC), Gallium Nitride (GaN) presented by the third generation of semiconductors ushered in the explosion. Among them, SiC and GaN as the most mature, the highest degree of commercialization of the third generation of semiconductor materials are natural limelight.

The development of power supply inevitably needs small volume and high efficiency products, and it is inevitable to improve the working frequency. GaN and SiC are dominant in power density.Gallium nitride (GaN)material first came into people's sight from LED and RF, and now develops into the application field of power devices. Gallium nitride GaN will provide high performance, low cost solutions.Because gallium nitride is based on silicon,or based on sapphire the cost of using 8 inch wafers will be greatly reduced in the future.

GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to market research firm Strategies Unlimited. By 2007 this is predicted to soar to $4.5 billion, with GaN-based LEDs, lasers and electronic devices contributing $4 billion, $402 million and $129 million, respectively.Today, GaN substrates are produced by vapor-phase transport

Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.This can be used in a high-capacity wireless network with coverage over a radius of several kilometers. In areas where fiber-optic cable is difficult to lay, to achieve high-speed wireless communications of several gigabits per second, one promising approach is to use high-frequency bands, such as the W band, which uses a wide frequency band.

We are pleased to offer GaN substrate to our customers including many who are developing better and more reliable for GaN HEMTs, which have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. Second generation technology with shorter gate lengths will be addressing higher frequency telecom and aerospace applications. Our GaN substrate has excellent properties, it’s a very hard, mechanically stable wide bandgap semiconductor material with high heat