What is GaN Epitaxial Wafer?

GaN Epitaxial wafer is made of gallium nitride, which can be used to manufacture electronic components, electronic devices, and electronic parts. GaN Epitaxial wafer has good thermal stability and electromagnetic shielding, and can be used to manufacture high-precision parts and components, such as circuit boards, electronic controllers, electronic modules, electronic interfaces, electronic connectors, etc.

Homray Material Technology not only provide GaN Substrate wafer but also offer GaN Epi Wafers. We offer 4 inch and 6 inch GaN-on-SiC Epi Wafer and GaN-on-Si Epi Wafer both for power HEMT and RF HEMT application.
 
GaN as the third generation semiconductor material, has the advantages of high temperature resistance, high compatibility, high thermal conductivity and wide band gap, and is relatively mature in China. According to the different substrate materials, GaN Epi Wafers can be divided into four categories: GaN  based on GaN, SiC-based GaN, sapphire based GaN and silicon-based GaN. Gallium nitride epitaxial wafer on silicon is the most widely used product with low production cost and mature production technology. The market demand for gallium nitride epitaxial sheets mainly depends on their application fields, such as electronics, optics, power, aerospace, etc.