u-GaN Cap/Fe Doped GaN Buffer SiC HEMT Wafer Manufacturer碳化硅基氮化镓HEMT外延片生产商Single Crystal GaN Substrate Wafer Suppliers 氮化镓单晶衬底晶片供应商

AlGaN/GaN On SiC HEMT Epi Wafer

Spec: 4 inch or 6 inch
Substrate: 4H-SiC
Thickness: 500um
Type: Semi-insulating
AlGaN/GaN碳化硅基氮化镓HEMT外延片

衬底尺寸：4 英寸 6 英寸
衬底材质：碳化硅
衬底厚度：500um
衬底类型：半绝缘型
GaN Epitaxial On Silicon Carbide For RF HEMT

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness: 350um 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
GaN on SiC RF HEMT Epi Wafer

Substrate: SiC
Substrate Thk: 500um
Substrate Type: 4H-SI
Substrate Grade: Production
SiC/GaN Epi Wafer Microwave RF

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN-OnSapphire Epi Wafer For HEMT

GaN-On-Sapphire Epi Wafer For HEMT
Substrate Size: 2inch 4inch 6inch
GaN Buffer Layer:2-4.5um
AIN Spacer:1nm
GaN-On-Sapphire Epi Wafer For RF

GaN-On-Sapphire Epi Wafer For RF
Substrate Size: 2 inch 4inch 6inch
GaN Buffer Layer:2-4.5um
AIN Spacer:1nm
GaN Epitaxial Wafer For LED

GaN-On-Sapphire Epi Wafer For LED
Dimension: 4 inch
Substrate: PSS Sapphire
Thickness: 660±10um
Structure: GaN On Sapphire

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