GaN Epitaxial On SiC For Power HEMT

As the professional manufacturer of GaN-on-SiC Epi wafer, we suppy power HEMT GaN on Silicon carbide Epi wafer mainly with 4 inch and 6inch. The GaN buffer layer of Epi wafer is 2~3um,each layer structure can be customized . We offer best price but high quality GaN Epi wafers on the market and customers from all over the world have trusted HMT as their preferred supplier of GaN epi-wafers and GaN transistors.

HMT company has highly automated quality control and manufacturing management systems installed and running across the Fab. HMT follow strict manufacturing procedures and production quality control to meet and exceed customer’s expectations and product specifications.

Standard Layer Specification For Power HEMT


Standard Layer Structure