Gan Epitaxial On Si For Power HEMT E-Mode

Homray Material Technology provides high-performance and high-quality GaN HEMT epitaxial wafers, including GaN-on-Si Epi wafer with Power HEMT E-mode and D-mode. We supply 2 inch,4inch,6inch,8inch GaN-on-Si Epitaxial Wafer with favourable price on the market in China. Silicon thickness is 675um and 1000um. Customized structure and layer parameters are available in HMT company.

HMT company has hihgly automated quality control and manufacturing management systems installed and running across the Fab. HMT follow strict manufacturing procedures and production quality control to meet and exceed customer’s expectations and product specifications.

Standard Layer Specification For Power HEMT E-Mode


Standard Layer Structure


Characterization Specification