GaN on SiC RF HEMT Epi Wafer

Homray Material Technology manufacture 4 inch and 6 inch GaN on SiC Epitaxy wafer for RF HEMT applications. The GaN on SiC Epi Wafer is a high-performance semiconductor product that is widely used in the electronics industry.It is a key component in the production of High Electron Mobility Transistors (HEMT), which are essential for various applications such as wireless communication, power electronics, and optoelectronics.

The SiC/GaN Epi Wafer is made of 4H-SiC (silicon carbide) substrate with a thickness of 500um, This substrate type is known for its stability and reliability, making it an ideal choice for high-power and high-frequency applications.





At HMT, we understand that every customer has unique requirements. That's why we offer the flexibility to customize the structure of our GaN-on-SiC Epi Wafers according to your specific needs. We work closely with our customers to understand their requirements and provide tailored solutions that meet their expectations.

Our GaN Epi Wafers are packaged in cassettes to ensure safe transportation and handling. The cassettes provide protection against external factors such as dust, moisture, and temperature changes, which can affect the quality of the wafers. With our secure packaging, you can be assured that your wafers will arrive in perfect condition.