pGaN on Si wafer Manufacturer for Power device with 650V E-mode 硅基氮化镓外延片生产商p-GaN

GaN Epitaxial On Si For RF HEMT

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter: 6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 2~5.5um
4 inch GaN Epitaxial On Si For Power HEMT

GaN-On-Si Epi Wafer For Power HEMT D-Mode
Substrate Diameter: 2inch,4inch,6inch, 8inch
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
Gan Epitaxial On Si For Power HEMT E-Mode

GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 2-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
GaN/SiN Cap AlGaN Barrier Epi with 25% Al HEMT

Spec: 4 inch,6 inch,8 inch
Substrate: Silicon
Thickness: 675um 1000um
Substrate grade： Production
4 inch硅基AlGaN/GaN外延片Power HEMT

衬底尺寸：4 英寸 6 英寸 8英寸
衬底材质：硅
衬底厚度：675um 1000um
衬底等级：产品级
GaN Epitaxial On SiC For Power HEMT

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
AlGaN/GaN On SiC HEMT Epi Wafer

Spec: 4 inch or 6 inch
Substrate: 4H-SiC
Thickness: 500um
Type: Semi-insulating
AlGaN/GaN碳化硅基氮化镓HEMT外延片

衬底尺寸：4 英寸 6 英寸
衬底材质：碳化硅
衬底厚度：500um
衬底类型：半绝缘型
GaN Epitaxial On Silicon Carbide For RF HEMT

GaN-On-SiC Epi Wafer For RF HEMT
Substrate Size: 2''3''4''6''
Substrate Thickness: 350um 500um
GaN Buffer Layer: 1.8um
AIN Spacer: 1nm
GaN on SiC RF HEMT Epi Wafer

Substrate: SiC
Substrate Thk: 500um
Substrate Type: 4H-SI
Substrate Grade: Production
SiC/GaN Epi Wafer Microwave RF

GaN-On-SiC Epi Wafer For Power HEMT
Substrate Size: 4 inch,6 inch
Substrate Thickness: 500um
GaN Buffer Layer: 2-3um
GaN-OnSapphire Epi Wafer For HEMT

GaN-On-Sapphire Epi Wafer For HEMT
Substrate Size: 2inch 4inch 6inch
GaN Buffer Layer:2-4.5um
AIN Spacer:1nm
GaN-On-Sapphire Epi Wafer For RF

GaN-On-Sapphire Epi Wafer For RF
Substrate Size: 2 inch 4inch 6inch
GaN Buffer Layer:2-4.5um
AIN Spacer:1nm

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