SiC/GaN Epi Wafer Microwave RF

HMT GaN-on-SiC Epi Wafer is one of GaN Epi wafer products of HMT, a leading semiconductor company based in China. With years of experience in the industry, HMT has become a trusted manufacturer for its high-quality and reliable products. AlGaN/GaN on SiC Epi Wafer is available in two sizes ont the markaet: 4 inch and 6 inch. Our GaN Epi Wafer customization service for HMT offers high-quality and reliable products to meet your specific needs. 

GaN-on-SiC Epitaxy Wafer has a wide range of applications, including:

• High-power electronic devices
• High-frequency communication systems
• High-power and high-temperature applications
• High-speed switching devices
• High-voltage devices

 

The GaN Epi Wafer is a high-performance epitaxy wafer that combines the benefits of GaN and SiC materials to provide superior performance and reliability. With its unique GaN/SiN cap AlGaN barrier structure, 25% Al content, and thin GaN buffer layer, it is an ideal choice for high-power and high-frequency electronic devices. Its excellent thermal conductivity, mechanical strength, and low defect density make it a versatile and cost-effective option for a wide range of applications.

GaN-on-SiC Epitaxial Wafer is a top-of-the-line product that offers exceptional performance and reliability. With its advanced technology and customizable structure, it is a highly versatile product that caters to a wide range of applications. As a trusted brand in the semiconductor industry, HMT takes pride in delivering high-quality products that meet the needs of our customers.