u-GaN Cap/Fe Doped GaN Buffer SiC HEMT Wafer Manufacturer碳化硅基氮化镓HEMT外延片生产商Single Crystal GaN Substrate Wafer Suppliers 氮化镓单晶衬底晶片供应商

2 Inch GaN-On-Sapphire Template Supplier

Dimensions: Ф 50.8 mm ± 1 mm
Thickness:4.5µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓晶片蓝宝石氮化镓衬底晶片

尺寸：2英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂，镁掺杂
衬底结构：GaN-On-Sapphire
4 Inch GaN-On-Sapphire Template Manufacturer

Dimensions: Ф 100 mm ± 0.1 mm
Thickness:4.5 µm, 20 µm
Orientation:C-plane(0001) ± 0.5°
Useable Surface Area:> 90%
氮化镓衬底晶片 4英寸GaN氮化镓衬底片

尺寸：4英寸
厚度：4.5um 20um
掺杂：非掺杂，硅掺杂
衬底结构：GaN-On-Sapphire
2 Inch Free-Standing GaN Substrate Supplier

Dimensions: Ф 50.8 mm ± 1 mm
Thickness: 350 ± 25 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 15 µm
氮化镓自支撑晶片 2英寸GaN衬底晶片

尺寸：2英寸
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
等级：测试级，研究级，产品级，
4 Inch Free-Standing Pure GaN Wafer Manufacturer

Dimensions: Ф 100 mm ± 1 mm
Thickness: 400 ± 50 µm
Useable Surface Area: > 90%
Total Thickness Variation: ≤ 40 µm
氮化镓自支撑衬底片 4英寸GaN氮化镓晶片

尺寸：4英寸
厚度：400um
掺杂：非掺杂，硅掺杂
电阻率：≤0.5Ω.cm
Square Free-Standing GaN Substrate

Dimension:10*15mm²
Thickness: 350±25um
Useable Surface Area:＞90%
Conduction Type: N Type,SI Type
10*10.5mm2方形氮化镓衬底晶片

尺寸：10*10.5mm²
厚度：350um
掺杂：非掺杂，硅掺杂，铁掺杂
电阻率：＜0.05Ω.cm
GaN On Si Epitaxy Wafer Manufacturer For RF HEMT

GaN-On-Si Epi Wafer For RF HEMT
Substrate Diameter: 6 inch (111)
Substrate Thickness:1000um
Epi Layer Total Thickness: 2~5.5um
4 inch D-HEMT GaN On Si Epi Wafer Supplier

GaN-On-Si Epi Wafer For Power HEMT D-Mode
Substrate Diameter: 2inch,4inch,6inch, 8inch
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
GaN On Si Epi Wafer Supplier Power HEMT E-Mode

GaN-On-Si Epi Wafer For Power HEMT-E Mode
Substrate Diameter: 2-8 inch(111)
Substrate Thickness: 675,1000um
Epi Layer Total Thickness: 2~5.5um
GaN/SiN Cap AlGaN Barrier Epi with 25% Al HEMT

Spec: 4 inch,6 inch,8 inch
Substrate: Silicon
Thickness: 675um 1000um
Substrate grade： Production
Power GaN HEMT Epi Wafer On Si Manufacturers

Spec: 4 inch,6 inch,8 inch
Substrate: Silicon
Thickness: 675um 1000um
Cap Layer： GaN or SiN
4 inch硅基AlGaN/GaN外延片Power HEMT

衬底尺寸：4 英寸 6 英寸 8英寸
衬底材质：硅
衬底厚度：675um 1000um
衬底等级：产品级

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